Impurity dominated thin film growth

Magnetron sputter deposition was applied to grow thin metal films in the presence of impurities. These impurities are ambient gas molecules and/or atoms from the residual gas present in the vacuum chamber. Seven materials were investigated: four single element metals (Al, Ag, Cu, and Cr), two widely applied alloys (Cu55Ni45 and Ni90Cr10), and one high entropy alloy (CoCrCuFeNi). The thin films were analyzed using X-ray diffraction to determine the domain size, the film texture, and the lattice parameter. The same trend for all studied materials is observed. When the ratio between the impurity and metal flux towards the substrate is low, the domain size is not affected by the presence of the impurities. In this regime, the incorporation of the impurities affects the lattice parameter. At high flux ratios, the change of the domain size can be described by a power law with the exponent equal to -1/2 for all studied materials. A kinetic Monte Carlo code is used to demonstrate this observed trend

Sputter deposition of copper oxide films

Copper oxide thin films are grown by reactive magnetron sputter deposition. To define the parameter space to obtain CuO films, the influence of the oxygen partial pressure, the total pressure, and the discharge current was investigated on the phase formation. A clear change from pure copper, over cuprite (Cu2O), and paramelaconite (Cu4O3) to tenorite (CuO) thin films with increasing oxygen partial pressure was observed using X-ray diffraction and Fourier transform infrared spectroscopy. The main driving force defining the phase composition is the oxygen partial pressure, while the influence of the total pressure, and the discharge current is minimal. A clear condition to obtain phase pure CuO films could be defined based on the measured discharge voltage. Both the domain size, and the Bragg peak position for pure CuO thin films can be correlated to the negative ion bombardment during film growth

Modeling reactive magnetron sputtering : opportunities and challenges

The complexity of the reactive magnetron sputtering process is demonstrated by four simulation examples. The examples, commonly encountered during the application of this process for thin film deposition, are described by a numerical model for reactive sputter deposition. A short description of the current model precedes these case studies. In the first example, redeposition of sputtered atoms on the target is studied by its effect on the hysteresis behavior often observed during reactive sputtering. Secondly, the complexity of current-voltage characteristics during reactive magnetron sputtering is treated. The influence of substrate rotation and the pulsing of the discharge current illustrate the time dependence of the reactive sputtering process. As a conclusion, the two main challenges for a further improvement of the model are discussed

Influence of Impurities on the Front Velocity of Sputter Deposited Al/CuO Thermite Multilayers

CuO and Al thin films were successively deposited using direct current (reactive) magnetron sputter deposition. A multilayer of five bilayers was deposited on glass, which can be ignited by heating a Ti resistive thin film. The velocity of the reaction front which propagates along the multilayer was optically determined using a high-speed camera. During the deposition of the aluminum layers, air was intentionally leaked into the vacuum chamber to introduce impurities in the film. Depositions at different impurity/metal flux ratios were performed. The front velocity reaches a value of approximately 20 m/s at low flux ratios but drops to approximately 7 m/s at flux ratios between 0.6 and 1. The drop is rather abrupt as the front velocity stays constant above flux ratios larger than 1. This behavior is explained based on the hindrance of the oxygen transport from the oxidizer (CuO) to the fuel (Al)

Influence of impurities on the front velocity of sputter deposited Al/CuO thermite multilayers

CuO and Al thin films were successively deposited using direct current (reactive) magnetron sputter deposition. A multilayer of five bilayers was deposited on glass, which can be ignited by heating a Ti resistive thin film. The velocity of the reaction front which propagates along the multilayer was optically determined using a high-speed camera. During the deposition of the aluminum layers, air was intentionally leaked into the vacuum chamber to introduce impurities in the film. Depositions at different impurity/metal flux ratios were performed. The front velocity reaches a value of approximately 20 m/s at low flux ratios but drops to approximately 7 m/s at flux ratios between 0.6 and 1. The drop is rather abrupt as the front velocity stays constant above flux ratios larger than 1. This behavior is explained based on the hindrance of the oxygen transport from the oxidizer (CuO) to the fuel (Al)

Influence of Impurities on the Front Velocity of Sputter Deposited Al/CuO Thermite Multilayers

CuO and Al thin films were successively deposited using direct current (reactive) magnetron sputter deposition. A multilayer of five bilayers was deposited on glass, which can be ignited by heating a Ti resistive thin film. The velocity of the reaction front which propagates along the multilayer was optically determined using a high-speed camera. During the deposition of the aluminum layers, air was intentionally leaked into the vacuum chamber to introduce impurities in the film. Depositions at different impurity/metal flux ratios were performed. The front velocity reaches a value of approximately 20 m/s at low flux ratios but drops to approximately 7 m/s at flux ratios between 0.6 and 1. The drop is rather abrupt as the front velocity stays constant above flux ratios larger than 1. This behavior is explained based on the hindrance of the oxygen transport from the oxidizer (CuO) to the fuel (Al)

Astronomical Education for public and its future development in Mongolia

No Abstract

On the grain size-thickness correlation for thin films

A meta-analysis of published data in combination with measurements on Al, Cu, CuO, CoCrCuFeNi, Ni90Cr10, TiN, and V sputter deposited thin films, demonstrates that the grain size is correlated to the film thickness by a power law. The growth exponent depends on the homologous temperature which is defined as the ratio between the deposition and the melting temperature of the studied material. An average value of the growth exponent close to 0.4 was found for the growth exponent for a homologous temperature between 0.14 and 0.31. Film growth models that depict an evolutionary overgrowth mechanism obtain the same growth exponent. Above a homologous temperature of approximately 0.3, a slightly higher exponent is observed which agrees with the general idea that at higher homologous temperatures the grain size is also influenced by restructuring mechanisms occurring during film growth. At low homologous temperatures (<0.14), a substantially lower exponent was noticed. From a theoretical point of view the growth exponent’s value should be close to zero. The aforementioned boundaries of the homologous temperatures correspond with those observed in published structure zone models that describe the microstructure of physical vapor deposited thin films. The good agreement suggests that the underlying mechanism for the observed boundaries is the atom mobility. This hypothesis was further investigated by a study on the influence of intentionally added impurities on the power law behavior for Al and Cu thin films. For both materials, a similar decrease of the grain size as a function of an increasing impurity-to-metal impingement flux ratio on the substrate was observed. No change of the growth exponent is observed for Al, while the growth exponent becomes almost zero for Cu at sufficiently high impurity-to-metal flux ratios